%0 Conference Paper %B 1977 International Electron Devices Meeting %D 1977 %T MIS solar cells: a review %A Pulfrey, D L %C Washington, DC, USA %K metal-insulator-semiconductor devices;reviews;solar cells; %P 47B - %X Summary form only given, substantially as follows: The metal-thin film insulator-semiconductor (MIS) structure is currently receiving much attention in solar cell studies. Both theoretical and practical investigations indicate that this structure offers a means of overcoming the principal deficiency of Schottky barrier solar cells, namely low open-circuit photovoltage, while maintaining the attractive features that have led the metal-semiconductor junction to be considered as a possible alternative to the p-n junctions for large-area, terrestrial, solar cell applications. Theories are reviewed in this paper and are further examined, for relevance to practical solar cells, in the light of experimental data from a variety of MIS solar cells employing Si and GaAs substrates %Z MIS solar cells;review;Si substrates;GaAs substrates; %9 inproceedings