%0 Journal Article %J Appl. Phys. Lett. (USA) %D 1979 %T New experimental evidence for minority-carrier MIS diodes %A Tarr, N G %A Pulfrey, D L %K aluminium;elemental semiconductors;metal-insulator-semiconductor structures;photodiodes;silicon;silicon compounds; %P 295 - 7 %U http://dx.doi.org/10.1063/1.90765 %V 34 %X Measurements of short-circuit density Jsc and open-circuit photovoltage Voc have been made over a range of illumination levels at various temperatures for Al-SiOx-pSi MIS photodiodes. It is found that at high illumination levels the data satisfy the relation Jsc=J0exp(qVoc/kT), where J0 is a temperature-dependent constant. By examining the variation of J0 with temperature it is conclusively demonstrated that the dark current in these diodes is dominated by minority-carrier flow, confirming recent theoretical predictions %Z illumination levels;Al-SiOx-pSi MIS photodiodes;dark current;short circuit density;open circuit photovoltage;minority carrier flow; %9 article