%0 Journal Article %J Solid-State Electron. (UK) %D 1977 %T A minority carrier MIS solar cell %A Pulfrey, D L %K metal-insulator-semiconductor devices;minority carriers;solar cells; %P 455 - 7 %V 20 %X MIS solar cells are described which exhibit high fill-factors and open-circuit voltages and which have dark, forward bias I-V characteristics of a double exponential form. The insulator formation was achieved by a low temperature oxidation in air and an optimum insulator thickness of 12-15 Å was observed. The device properties suggest that the diodes may be operating in a recently-described, non-equilibrium minority carrier, tunnel mode %Z minority carrier MIS solar cell;forward bias I-V characteristics; %9 article