%0 Journal Article %J J. Appl. Phys. (USA) %D 1976 %T A model for Schottky-barrier solar cell analysis %A McOuat, R F %A Pulfrey, D L %K semiconductor-metal boundaries;solar cells; %P 2113 - 19 %U http://dx.doi.org/10.1063/1.322857 %V 47 %X A model, applicable to materials with high absorption coefficients and surface recombination velocities has been developed for the analysis of metal-semiconductor solar-cells. Calculations are presented for Au-Si and Au-GaAs cells which indicate that the highest efficiency may be obtained using n-type GaAs. Experimental results for Au/n-GaAs are found to be in good agreement with the predictions %Z model;Schottky barrier solar cell analysis;Au-Si cells;Au-GaAs cells; %9 article