%0 Journal Article %J Solid-State Electron. (UK) %D 1992 %T A new method for estimating the electron concentration in the 2-dimensional electron gas in MODFETs %A Zhou, Haosheng %A Pulfrey, D L %K carrier density;high electron mobility transistors;semiconductor device models;two-dimensional electron gas;WKB calculations; %P 1779 - 82 %U http://dx.doi.org/10.1016/0038-1101(92)90260-J %V 35 %X By employing the WKB approximation to solve Schrodinger's equation and invoking a modified density of states function which allows a classical solution of Poisson's equation, a computationally efficient method for obtaining the bound-state electron concentration in the two-dimensional electron gas in MODFETs has been developed. The method gives results which agree very closely with those from the full, self-consistent, quantum-mechanical calculation %Z model;Schrodinger equation;Poisson equation;electron concentration;WKB approximation;density of states function;two-dimensional electron gas;MODFETs;AlGaAs-GaAs heterojunction region; %9 article