%0 Conference Paper %B Phys. Status Solidi A (Germany) %D 1999 %T Towards an AlGaN, solar-blind, p-i-n photodetector %A Pulfrey, D L %A Kuek, J J %A Nener, B D %A Parish, G %A Mishra, U K %A Tarsa, E J %C Montpellier, France %K aluminium compounds;band structure;carrier lifetime;electron affinity;electron-hole recombination;gallium compounds;III-V semiconductors;interface states;p-i-n photodiodes;photodetectors;semiconductor heterojunctions;tunnelling;wide band gap semiconductor %P 169 - 73 %U http://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<169::AID-PSSA169>3.0.CO;2-6 %V 176 %X A heterostructure diode, utilizing p- and i-Al0.33Ga0.67N layers on top of an n-GaN region, is investigated for its potential as a solar-blind photodetector. The study, which is carried out via simulations using MEDICI, examines some techniques for suppressing the hole current that is photogenerated in the low bandgap n-GaN material. The factors considered are: the thickness and electron affinity of the i-Al0.33Ga0.67N layer; the addition of a thin, n-doped AlGaN layer to widen the tunneling barrier for holes; and the creation of a thin region of low minority carrier lifetime at the heterointerface to remove the holes by recombination. The results show that AlGaN/GaN, p-i-n heterodiodes have considerable promise as solar-blind photodetectors %Z III-V semiconductors;interface states;band structure;heterostructure diode;responsivity;MEDICI simulations;hole current suppression;electron affinity;hole tunneling barrier;minority carrier lifetime;heterointerface;recombination;p-i-n heterodiodes;solar-blind photodetectors;wide band gap semiconductors;Al0.33Ga0.67N-GaN; %9 inproceedings