%0 Conference Paper %B 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) %D 1999 %T Compact modeling of high-frequency, small-dimension bipolar transistors %A Pulfrey, D L %A St. Denis, A R %A Vaidyanathan, M %C Perth, WA, Australia %K bipolar transistors;Boltzmann equation;semiconductor device models; %P 81 - 5 %U http://dx.doi.org/10.1109/COMMAD.1998.791590 %X Recent progress in the development of compact models for high-speed bipolar transistors with quasi-ballistic base widths (on the order of a mean-free path length) is summarized. The correctness of basing such models on the drift-diffusion equation is examined by comparing results with solutions to the Boltzmann transport equation. Useful and well-founded compact expressions are presented for important dc and ac device parameters %Z compact model;high-frequency bipolar transistor;high-speed device;quasi-ballistic transport;drift-diffusion equation;Boltzmann transport equation;maximum oscillation frequency;small-dimension BJT; %9 inproceedings