%0 Conference Paper
%B 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)
%D 1999
%T Compact modeling of high-frequency, small-dimension bipolar transistors
%A Pulfrey, D L
%A St. Denis, A R
%A Vaidyanathan, M
%C Perth, WA, Australia
%K bipolar transistors;Boltzmann equation;semiconductor device models;
%P 81 - 5
%U http://dx.doi.org/10.1109/COMMAD.1998.791590
%X Recent progress in the development of compact models for high-speed bipolar transistors with quasi-ballistic base widths (on the order of a mean-free path length) is summarized. The correctness of basing such models on the drift-diffusion equation is examined by comparing results with solutions to the Boltzmann transport equation. Useful and well-founded compact expressions are presented for important dc and ac device parameters
%Z compact model;high-frequency bipolar transistor;high-speed device;quasi-ballistic transport;drift-diffusion equation;Boltzmann transport equation;maximum oscillation frequency;small-dimension BJT;
%9 inproceedings