%0 Journal Article %J IEEE Trans. Electron Devices (USA) %D 1993 %T Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's %A Pulfrey, D L %A Searles, S %K aluminium compounds;Fermi level;gallium arsenide;heterojunction bipolar transistors;III-V semiconductors;semiconductor device models; %P 1183 - 5 %U http://dx.doi.org/10.1109/16.214752 %V 40 %X The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices. However, it is argued that the effect of the splitting on the current gain may be significant %Z AlGaAs-GaAs HBT;base-emitter junction;electron quasi-Fermi level splitting;double-heterojunction bipolar transistors;current gain;AlGaAs-GaAs single heterojunction bipolar transistor; %9 article