%0 Journal Article %J J. Appl. Phys. (USA) %D 1996 %T The influence of a transverse-effective-mass difference on the current at an abrupt heterojunction %A Searles, S %A Pulfrey, D L %K aluminium compounds;effective mass;gallium arsenide;heterojunction bipolar transistors;III-V semiconductors;semiconductor device models;semiconductor heterojunctions;tunnelling; %P 4203 - 10 %U http://dx.doi.org/10.1063/1.361787 %V 79 %X The issue of momentum conservation, and its effect on tunneling, at an abrupt heterojunction interface between semiconductors of different transverse effective mass is considered. A thorough derivation is provided of the equations needed to calculate the electron tunnel current in forward bias. Quantitative results are presented for the current in a variety of effective-mass-difference scenarios, including that of the AlGaAs/GaAs case. The circumstances are identified in which the effective-mass difference causes the current to differ significantly from the value computed when following the usual practice of assuming the effective masses are equal %Z transverse-effective-mass difference;abrupt heterojunction;momentum conservation;tunneling;forward bias;AlGaAs/GaAs;HBTs;AlGaAs-GaAs; %9 article