%0 Journal Article %J Solid-State Electron. (UK) %D 1992 %T Computation of transit and signal delay times for the collector depletion region of GaAs-based HBTs %A Zhou, Haosheng %A Pulfrey, D L %K aluminium compounds;delays;gallium arsenide;heterojunction bipolar transistors;III-V semiconductors; %P 113 - 15 %U http://dx.doi.org/10.1016/0038-1101(92)90312-Z %V 35 %X This paper describes an investigation for GaAs-based HBTs in which the magnitude of the field in the collector portion of the base-collector depletion region is taken to be either uniform, decreasing (conventional structure) or increasing (inverted-field structure). The ν(x) profile is computed from the E(x) profile, taking into account intervalley transfer %Z transit time;signal delay times;collector depletion region;HBTs;inverted-field structure;intervalley transfer;AlGaAs-GaAs; %9 article