%0 Journal Article %J IEEE Trans. Electron Devices (USA) %D 2001 %T High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes %A Pulfrey, D L %A Kuek, J J %A Leslie, M P %A Nener, B D %A Parish, G %A Mishra, U K %A Kozodoy, P %A Tarsa, E J %K aluminium compounds;doping profiles;gallium compounds;III-V semiconductors;p-i-n photodiodes;semiconductor device models; %P 486 - 9 %U http://dx.doi.org/10.1109/16.906440 %V 48 %X The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features, such as InGaN quantum wells and delta-doped regions of p-Al0.33Ge0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude %Z high UV/solar rejection ratios;p-i-n photodiodes;solar-blind detection capability;heterostructure diodes;doped GaN layers;MEDICI;simulations;InGaN quantum wells;delta-doped regions;low-bandgap GaN regions;PIN photodiodes;GaN-Al0.33Ga0.67N-GaN;InGaN; %9 article