%0 Conference Paper %B WOCSDICE 2000. 24th Workshop on Compound Semiconductor Devices and Integrated Circuits %D 2000 %T Evaluation of AlGaN-GaN HBTs %A Fathpour, S %A Pulfrey, D L %C Aegean Sea, Greece %K aluminium compounds;gallium compounds;heterojunction bipolar transistors;high-temperature electronics;impurity states;ionisation;polarisation;semiconductor device models; %P VIII-15, VIII-16 - %X GaN is regarded as a promising material for high-temperature electronic devices. This hypothesis is examined by using compact models to predict the current gain of AlGaN-GaN HBTs at temperatures up to 600 K. In addition, the effects on HBT performance of two unusual features of GaN, i.e. spontaneous polarization and incomplete acceptor ionization, are examined by numerical modeling %Z AlGaN-GaN HBTs;GaN high-temperature electronic device material;compact models;current gain;HBT performance;spontaneous polarization;incomplete acceptor ionization;600 K;AlGaN-GaN; %9 inproceedings