%0 Conference Paper %B Int. J. High Speed Electron. Syst. (Singapore) %D 2002 %T Full-chip power-supply noise: the effect of on-chip power-rail inductance %A Fok, C W %A Pulfrey, D L %C St. Croix, VI, USA %K circuit simulation;CMOS digital integrated circuits;equivalent circuits;inductance;integrated circuit noise;switching;transients; %P 573 - 82 %U http://dx.doi.org/10.1142/S0129156402001472 %V 12 %X The importance of on-chip power-rail inductance in generating delta-I power-supply noise is examined in this paper using systematic circuit simulation of the complete integrated-circuit power net. This source of noise is compared to the resistive IR drop in the net, and to the delta-I noise due to both high-inductance- and low- inductance-bonding packages. Results are presented for a typical on-chip power net in 0.18 μm CMOS technology, and it is demonstrated that the inductance of this on-chip power net is the dominant contributor to the full-chip power-supply noise. The simultaneous switching events which produce the triggering current transients for the delta-I noise are taken to arise from core-logic switching; the mitigating, de-coupling role of the capacitance of non-switching gates within the core-logic block is considered %Z full-chip power-supply noise;on-chip power-rail inductance;delta-I power-supply noise;circuit simulation;integrated circuit power net;IC power net;high-inductance-bonding packages;low-inductance-bonding packages;CMOS technology;simultaneous switching events;triggering current transients;core-logic switching;de-coupling role;nonswitching gate capacitance;0.18 micron; %9 inproceedings