%0 Journal Article %J IEEE Trans. Nanotechnol. (USA) %D 2003 %T Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs %A Clifford, J %A John, D L %A Pulfrey, D L %K carbon nanotubes;Fermi level;nanotube devices;Schottky gate field effect transistors;semiconductor device models;work function; %P 181 - 5 %U http://dx.doi.org/10.1109/TNANO.2003.817527 %V 2 %X The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube field-effect transistors (FETs) are computed via a self-consistent solution to the two-dimensional potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of-equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and drain contacts to the tube, respectively. The interesting phenomena of bipolar conduction in a FET, and of drain-induced barrier thinning (DIBT) are observed. These phenomena are shown to add a breakdown-like feature to the drain I-V characteristic. It is also shown that a more traditional, saturating-type characteristic can be obtained by workfunction engineering of the source and drain contacts %Z bipolar conduction;drain-induced barrier thinning;carbon nanotube FETs;drain current-voltage characteristics;Schottky-barrier carbon nanotube field-effect transistors;self-consistent solution;two-dimensional potential profile;electron charges;hole charges;electron currents;hole currents;out-of-equilibrium results;electron quasi-Fermi levels;hole quasi-Fermi levels;breakdown-like feature;drain I-V characteristic;saturating-type characteristic;workfunction engineering;quasi-equilibrium analysis;energy band diagram; %8 2003 %9 article