%0 Conference Paper %B Proc. SPIE - Int. Soc. Opt. Eng. (USA) %D 2004 %T Carbon nanotube transistors: an evaluation %A Castro, L C %A John, D L %A Pulfrey, D L %C Perth, SA, Australia %K carbon nanotubes;field effect transistors;nanoelectronics;semiconductor device models;work function; %P 1 - 10 %U http://dx.doi.org/10.1117/12.533349 %V 5276 %X A simple, non-equilibrium model is used to evaluate the likely DC performance of carbon nanotube field-effect transistors. It is shown that, by appropriate work function engineering of the source, drain and gate contacts to the device, the following desirable properties should be realizable: a sub-threshold slope close to the thermionic limit; a conductance close to the interfacial limit; an ON/OFF ratio of around 103; ON current and transconductance close to the low-quantum-capacitance limit %Z carbon nanotube transistors;carbon nanotube FET DC performance;FET nonequilibrium model;work function engineering;source contacts;drain contacts;gate contacts;thermionic limit sub-threshold slope;interfacial limit conductance;ON/OFF ratio;ON current;transconductance;low-quantum-capacitance limit;C; %9 inproceedings