%0 Journal Article %J Smart Mater. Struct. (UK) %D 2006 %T An improved evaluation of the DC performance of carbon nanotube field-effect transistors %A Castro, L C %A John, D L %A Pulfrey, D L %K carbon nanotubes;field effect transistors;nanotechnology;Poisson equation;quantum theory;semiconductor device models; %P 9 - 13 %U http://dx.doi.org/10.1088/0964-1726/15/1/003 %V 15 %X A self-consistent Schrodinger-Poisson solver is used to improve upon a recent evaluation of the attainable DC performance of coaxial carbon nanotube field-effect transistors. The earlier evaluation, which was based on the predictions of a compact model, is shown to be optimistic because of the model's inadequate treatment of quantum mechanical reflection of thermionically injected carriers. This deficiency of the compact model is remedied, to a large extent, by incorporating a new, short expression for quantum mechanical reflection under phase-incoherent conditions %Z carbon nanotube field-effect transistors;Schrodinger-Poisson solver;quantum-mechanical reflection;thermionically injected carriers;phase-incoherent conditions;C; %9 article