%0 Journal Article %J Diffus. Defect Data B, Solid State Phenom. (Switzerland) %D 2007 %T High-frequency capability of Schottky-barrier carbon nanotube FETs %A Castro, L C %A Pulfrey, D L %A John, D L %K carbon nanotubes;field effect transistors;nanotube devices;Schottky barriers; %P 693 - 6 %V 121-123 %X The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime %Z high-frequency capability;Schottky-barrier;carbon nanotube;FET;negative-barrier Schottky contacts;transconductance;C; %9 article