%0 Journal Article %J Sensors and Actuators A %D 2004 %T Compensation of temperature effects on the pull-in voltage of microstructures %A Rocha, L A %A Cretu, E %A Wolffenbuttel, R F %K Microelectromechanical systems; Pull-in voltage; Temperature compensation %P 351-356 %V 115 (The 1 %X The pull-in voltage of a suspended microstructure has been investigated for use as on-chip voltage reference in a compatible MEMS-IC process. Pull-in is detected using capacitive displacement measurement. The stability is affected by an initial parasitic charge build-up and a temperature sensitivity of ?149 V/K. A burn-in procedure is required to minimize the first effect. The temperature coefficient is compensated for by applying additional temperature dependent electrostatic energy to the microstructure. Devices fabricated in an epi-poly process and designed for a nominal pull-in voltage at 5 V have a measured value at 4.7424 V. Drift becomes negligible after 120 h of operation. The temperature reproducibility is within the resolution of the readout at 100 V over a temperature range between 20 and 60 $\,^{\circ}$C. %8 September 21 %9 article