%0 Conference Paper %B 207th Electrochemical Society (ECS) Meeting %D 2005 %T RR-P3HT OTFTs using low-temperature PECVD silicon nitride as gate dielectric and encapsulation %A Li, F %A Koul, S %A Vygranenko, Y %A Servati, P %A Nathan, A %C Quebec City, Quebec %P 7 %S 207th Electrochemical Society (ECS) Meeting %V 501 %8 16/05/2005