%0 Conference Paper %B International Electron Device Meeting (IEDM) Technical Digest %D 2006 %T How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD? %A Lee, C H %A Sazonov, A %A Robertson, J %A Nathan, A %A Rad, M %A Servati, P %A Milne, W I %C San Francisco, CA %P 295-298 %8 11/12/2006