%0 Journal Article %J JOURNAL OF APPLIED PHYSICS %D 2015 %T Coupled Dopant Diffusion and Segregation in Inhomogeneous SiGe Alloys: Experiments and Modeling %A Yiheng Lin Manfred Schiekofer and Guangrui (Maggie) Xia, Hiroshi Yasuda %P 214901-1 to 214901-7 %U http://scitation.aip.org/content/aip/journal/jap/117/21/10.1063/1.4921798 %V 117 %X A coupled diffusion and segregation model was derived, where the contributions from diffusion and segregation to dopant ?ux are explicitly shown. The model is generic to coupled diffusion and segregation in inhomogeneous alloys, and provides a new approach in segregation coef?cient extraction, which is especially helpful for heterostructures with lattice mismatch strains. Experiments of coupled P diffusion and segregation were performed with graded SiGe layers for Ge molar fractions up to 0.18, which are relevant to pnp SiGe heterojunction bipolar transistors. The model was shown to catch both diffusion and segregation behavior well. The diffusion-segregation model for P in SiGe alloys was calibrated and Eseg=0.5 eV is suggested for the temperature range from 800 to 950 degree C. %8 05/2015