%0 Journal Article %J ECS Journal of Solid State Science and Technology %D 2014 %T Experiments and modeling of Si-Ge interdiffusion with partial strain relaxation in epitaxial SiGe heterostructures %A Yuanwei Dong and Guangrui (Maggie) Xia, Patricia Mooney Feiyang Cai Dalaver Anjum Naeem Ur-Rehman Xixiang Zhang %U http://jss.ecsdl.org/cgi/content/abstract/3/10/P302 %X Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration pro?ling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800?C and 840?C), the degree of relaxation, R, reached a ?plateau?, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data. %8 07/2014