%0 Conference Paper %B IEEE International Electron Device Meeting %D 2008 %T High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor %A Yang, B %A Takalkar, R %A Ren, Z %A Black, L %A Dube, A %A Weijtmans, J W %A Li, J %A Johnson, J B %A Faltermeier, J %A Madan, A %A Zhu, Z %A Turansky, A %A Xia, G %A Chakravarti, A %A Pal, R %A Chan, K %A Reznicek, A %A Adam, T N %A Sou, de %8 12/2008