%0 Journal Article %J APPLIED PHYSICS LETTERS %D 2008 %T Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors %A Ahnood, A %A Ghaffarzadeh, K %A Nathan, A %A Servati, P %A Li, F %A Esmaeili-Rad, M R %A Sazonov, A %N 16 %P 163503 %V 93 %X Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. %8 11/2008