%0 Journal Article
%J Journal of Selected Topics in Quantum Electronics
%D 2009
%T Analytical Modeling of the Transistor Laser
%A Faraji, Behnam
%A Shi, Wei
%A Pulfrey, David
%A Chrostowski, Lukas
%N 3
%P 594-603
%U http://dx.doi.org/10.1109/JSTQE.2009.2013178
%V 15
%X We derive analytic expressions for the small-signal modulation response of the transistor laser operating in the common-emitter and common-base configurations. We compare the performance (current gain and small-signal modulation bandwidth) of the transistor laser in these two modes of operation. The common-base operation results in a wide-band small-signal modulation response with the same relaxation oscillation limitations as conventional lasers. The common-base configuration shows a bandwidth enhancement due to a bandwidth equalization together with a suppression of the relaxation oscillations. A bandwidth of 48 GHz is predicted for a vertical cavity laser biased at 10I$_{th}$. Finally we show that the small-signal responses of the common-base and common-emitter can be approximated by a 3rd order transfer function.
%Z Manuscript proof: http://www.mina.ubc.ca/files/jstqe-chrostowski-2013178-proof.pdf
%8 05/2009