%0 Journal Article %J Journal of Selected Topics in Quantum Electronics %D 2009 %T Analytical Modeling of the Transistor Laser %A Faraji, Behnam %A Shi, Wei %A Pulfrey, David %A Chrostowski, Lukas %N 3 %P 594-603 %U http://dx.doi.org/10.1109/JSTQE.2009.2013178 %V 15 %X We derive analytic expressions for the small-signal modulation response of the transistor laser operating in the common-emitter and common-base configurations. We compare the performance (current gain and small-signal modulation bandwidth) of the transistor laser in these two modes of operation. The common-base operation results in a wide-band small-signal modulation response with the same relaxation oscillation limitations as conventional lasers. The common-base configuration shows a bandwidth enhancement due to a bandwidth equalization together with a suppression of the relaxation oscillations. A bandwidth of 48 GHz is predicted for a vertical cavity laser biased at 10I$_{th}$. Finally we show that the small-signal responses of the common-base and common-emitter can be approximated by a 3rd order transfer function. %Z Manuscript proof: http://www.mina.ubc.ca/files/jstqe-chrostowski-2013178-proof.pdf %8 05/2009