%0 Journal Article %J IEEE Transactions on Electron Devices %D 2004 %T ?Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs %A Guangrui Xia and J. L. Hoyt, Nayfeh Lee Fitzgerald Antoniadis Anjum Li Hull Klymko %V 51 %8 12/2004