%0 Conference Paper %B 11th IEEE Photovoltaic Specialists Conference %D 1975 %T Analysis of silicon Schottky barrier solar cells %A McOuat, R F %A Pulfrey, D L %C Scottsdale, AZ, USA %K Schottky-barrier diodes;semiconductor device models;solar cells; %P 371 - 5 %X A model is presented that allows prediction of the performance of metal/single crystal silicon diodes as photovoltaic solar energy convertors. Calculations on the gold/n-type silicon system indicate that the internal quantum efficiency of the device is high over most of the working wavelength range; that the major component of the photocurrent arises in the bulk of the semi-conductor; and that there is an optimum metal film thickness as regards conversion efficiency %Z silicon Schottky barrier solar cells;model;metal/single crystal silicon diodes;photovoltaic solar energy convertors;semi-conductor;performance prediction; %9 inproceedings