@article { 3187529, title = {Thermal stressing of bipolar transistors with metal-insulator-semiconductor heterojunction emitters}, journal = {Appl. Phys. Lett. (USA)}, volume = {52}, number = {20}, year = {1988}, note = {thermal stressing;bipolar transistors;metal-insulator-semiconductor heterojunction emitters;common-emitter current gains;}, pages = {1664 - 6}, type = {article}, abstract = {Silicon bipolar junction transistors employing metal-thin insulator-semiconductor tunnel junction emitters are capable of realizing extremely high common-emitter current gains. The experimental evidence presented here indicates a possible limitation of these devices as regards their inability to withstand moderate temperature stressing}, keywords = {bipolar transistors;metal-insulator-semiconductor devices;}, URL = {http://dx.doi.org/10.1063/1.99051}, author = { Szeto, N. and Pulfrey, D.L. and Tarr, N.G.} }