@article { 1448826, title = {MIS solar cells with back surface fields}, journal = {Appl. Phys. Lett. (USA)}, volume = {35}, number = {3}, year = {1979}, note = {back surface fields;Al-SiOx-pSi MIS solar cells;MIS diodes;dark current;open circuit voltage;}, pages = {258 - 60}, type = {article}, abstract = {Al-SiOx-pSi MIS solar cells have been fabricated on 10-Ω cm substrates both with and without back surface fields. The back-surface-field structure has been found to significantly enhance the open-circuit voltage of these cells, and Voc values in excess of 580 mV have been recorded at photocurrent densities of 300 Am-2. These results provide further evidence that MIS diodes can be produced in which the dark current is dominated by minority-carrier flows}, keywords = {aluminium;elemental semiconductors;metal-insulator-semiconductor devices;silicon;silicon compounds;solar cells;}, URL = {http://dx.doi.org/10.1063/1.91092}, author = { Tarr, N.G. and Pulfrey, D.L. and Iles, P.A.} }