@article { 2426176, title = {The effect of metal work function on current conduction in metal-insulator-semiconductor tunnel junctions}, journal = {J. Appl. Phys. (USA)}, volume = {57}, number = {2}, year = {1985}, note = {Si-SiO2-Al;Si-SiO2-Mg;metal work function;metal-insulator-semiconductor tunnel junctions;tunnel-limited current conduction;MIS-inversion layer solar cells;}, pages = {373 - 6}, type = {article}, abstract = {The effect of metal work function on current conduction in metal-insulator-semiconductor (MIS) tunnel junctions has been investigated both experimentally and theoretically. MIS junctions on 2 and 10 Ω cm silicon substrates have been fabricated with both aluminum and magnesium contacts. It is shown that in the region of tunnel-limited current conduction, device characteristics are dependent on the metal work function. The results are in good agreement with predictions from a comprehensive analytical model. The implication of this result for MIS-inversion layer solar cells, where contact current densities are much larger than in transparent metal MIS devices, is examined}, keywords = {metal-insulator-semiconductor structures;tunnelling;work function;}, URL = {http://dx.doi.org/10.1063/1.334761}, author = { Camporese, D.S. and Pulfrey, D.L.} }