@inproceedings { 3497983, title = {Series resistance calculations for polysilicon tunnel junction emitter transistors}, journal = {Can. J. Phys. (Canada)}, volume = {67}, number = {4}, year = {1989}, note = {poly-Si tunnel junction emitter transistors;series resistance calculations;potential barrier shape dependence;VLSI;electrical resistance;thin insulating layer;polycrystalline;triangular barrier;Si;}, pages = {218 - 20}, type = {inproceedings}, address = {Ottawa, Ont., Canada}, abstract = {Calculations are reported of the series resistance caused by the thin insulating layer which separates the polycrystalline and monocrystalline regions of the emitter in certain types of polysilicon emitter transistors. It is demonstrated that the series resistance depends on the shape of the potential barrier which characterizes the thin insulator. For a triangular barrier the series resistance may be low enough for the transistors to be acceptable for very large scale integrated circuit applications}, keywords = {bipolar transistors;elemental semiconductors;semiconductor device models;silicon;tunnelling;}, author = { Tsou, B.P.C. and Chu, K.M. and Pulfrey, D.L.} }