@inproceedings { 1587265, title = {MIS solar cells with diffused back surface fields, and diffused junction solar cells with MIS back surface fields}, journal = {Fourteenth IEEE Photovoltaic Specialists Conference 1980}, year = {1980}, note = {diffused back surface fields;diffused junction solar cells;MIS back surface fields;open circuit voltage;dark current component;barrier metal work function;MIS solar cells;minority carrier injection diffusion current;}, pages = {1345 - 9}, type = {inproceedings}, address = {San Diego, CA, USA}, abstract = {The results of two experiments involving BSF solar cells with MIS junctions are reported. Firstly, it is shown that the open circuit voltage of solar cells with a positive barrier, MIS front junction can be significantly enhanced through the use of a diffused back surface field. This result provides conclusive evidence that MIS cells can be produced in which the main dark current component is the minority carrier injection-diffusion current. Secondly, it is shown that the open circuit voltage of solar cells with a diffused front junction can be significantly enhanced through the use of a negative barrier MIS back contact. This result confirms the simple theory of current flow in negative barrier MIS contacts which is also described. The theory predicts that by an appropriate choice of barrier metal work function and insulator thickness, it is possible to produce a negative barrier MIS contact which does not impede the flow of majority carriers, but which acts as a surface of low effective recombination velocity for minority carriers}, keywords = {metal-insulator-semiconductor devices;minority carriers;photovoltaic cells;solar cells;}, author = { Tarr, N.G. and Pulfrey, D.L. and Iles, P.A.} }