@article { 2588587, title = {The emitter-injection efficiency and emitter effective surface-recombination velocity in polysilicon emitter transistors}, journal = {Can. J. Phys. (Canada)}, volume = {63}, number = {6}, year = {1985}, note = {emitter-injection efficiency;emitter effective surface-recombination velocity;polysilicon emitter transistors;bipolar transistors;polysilicon-insulator tunnel-junction contact;thin insulating layer;monocrystalline emitter surface;polycrystalline contact;}, pages = {693 - 4}, type = {article}, abstract = {Measurements of the emitter-injection efficiency and calculations of the emitter effective surface-recombination velocity are reported for polysilicon emitter transistors, i.e. bipolar transistors with a polysilicon-insulator tunnel-junction contact to the emitter. It is demonstrated that the emitter-injection efficiency increases significantly and the emitter effective surface-recombination velocity decreases by two orders of magnitude when a thin insulating layer is deliberately grown between the monocrystalline emitter surface and the polycrystalline contact}, keywords = {bipolar transistors;electron-hole recombination;semiconductor-insulator boundaries;}, author = { Van Halen, P. and Camporese, D.S. and Pulfrey, D.L.} }