@article { 1920488, title = {New experimental evidence for minority-carrier reflection at negative-barrier MIS contacts}, journal = {IEEE Trans. Electron Devices (USA)}, volume = {ED-29}, number = {6}, year = {1982}, note = {minority-carrier reflection;negative-barrier MIS contacts;Mg-SiOx-n-Si back contact;long-wavelength photoresponse;p+-n solar cells;effective surface-recombination velocity;n-n+ high-low junction;}, pages = {1018 - 21}, type = {article}, abstract = {Experimental evidence for the minority-carrier reflecting properties of the negative-barrier MIS junction is presented. First, it is shown that a negative-barrier Mg-SiOx-n-Si back contact can be used to enhance the long-wavelength photoresponse of p+-n solar cells in the same manner as a diffused n+ backsurface field. Secondly, measurements of the effective surface-recombination velocity for an Mg-SiOx-nSi contact and for a diffused n-n+ high-low junction formed on an identical substrate are reported. Both junctions gave very low values of recombination velocity, on the order of 50 cm/s}, keywords = {electron-hole recombination;magnesium;metal-insulator-semiconductor structures;minority carriers;silicon;silicon compounds;solar cells;}, author = { Tarr, N.G. and Pulfrey, D.L. and Iles, P.A. and Neugroschel, A.} }