@inproceedings { 1836681, title = {Development of fine line silicon shadow masks for the deposition of solar cell grids}, journal = {Fifteenth IEEE Photovoltaic Specialists Conference - 1981}, year = {1981}, note = {fine line Si shadow masks;elemental semiconductor;solar cell grids deposition;fabrication;anisotropically etching V-grooves;}, pages = {527 - 9}, type = {inproceedings}, address = {Kissimmee, FL, USA}, abstract = {Recent developments in the fabrication of silicon shadow masks to delineate fine linewidth grid patterns for solar cells are described. Linewidths down to 10 micron have been achieved with masks prepared by anisotropically etching V-grooves into one surface of a pre-thinned wafer. These masks have been used in a simple procedure to fabricate MISIL solar cells with total area conversion efficiencies of 13.7%}, keywords = {elemental semiconductors;masks;silicon;solar cells;}, author = { Camporese, D.S. and Lester, T.P. and Pulfrey, D.L.} }