@article { 1358452, title = {New experimental evidence for minority-carrier MIS diodes}, journal = {Appl. Phys. Lett. (USA)}, volume = {34}, number = {4}, year = {1979}, note = {illumination levels;Al-SiOx-pSi MIS photodiodes;dark current;short circuit density;open circuit photovoltage;minority carrier flow;}, pages = {295 - 7}, type = {article}, abstract = {Measurements of short-circuit density Jsc and open-circuit photovoltage Voc have been made over a range of illumination levels at various temperatures for Al-SiOx-pSi MIS photodiodes. It is found that at high illumination levels the data satisfy the relation Jsc=J0exp(qVoc/kT), where J0 is a temperature-dependent constant. By examining the variation of J0 with temperature it is conclusively demonstrated that the dark current in these diodes is dominated by minority-carrier flow, confirming recent theoretical predictions}, keywords = {aluminium;elemental semiconductors;metal-insulator-semiconductor structures;photodiodes;silicon;silicon compounds;}, URL = {http://dx.doi.org/10.1063/1.90765}, author = { Tarr, N.G. and Pulfrey, D.L.} }