@article { 946967, title = {A model for Schottky-barrier solar cell analysis}, journal = {J. Appl. Phys. (USA)}, volume = {47}, number = {5}, year = {1976}, note = {model;Schottky barrier solar cell analysis;Au-Si cells;Au-GaAs cells;}, pages = {2113 - 19}, type = {article}, abstract = {A model, applicable to materials with high absorption coefficients and surface recombination velocities has been developed for the analysis of metal-semiconductor solar-cells. Calculations are presented for Au-Si and Au-GaAs cells which indicate that the highest efficiency may be obtained using n-type GaAs. Experimental results for Au/n-GaAs are found to be in good agreement with the predictions}, keywords = {semiconductor-metal boundaries;solar cells;}, URL = {http://dx.doi.org/10.1063/1.322857}, author = { McOuat, R.F. and Pulfrey, D.L.} }