@article { 4309460, title = {A new method for estimating the electron concentration in the 2-dimensional electron gas in MODFETs}, journal = {Solid-State Electron. (UK)}, volume = {35}, number = {12}, year = {1992}, note = {model;Schrodinger equation;Poisson equation;electron concentration;WKB approximation;density of states function;two-dimensional electron gas;MODFETs;AlGaAs-GaAs heterojunction region;}, pages = {1779 - 82}, type = {article}, abstract = {By employing the WKB approximation to solve Schrodinger's equation and invoking a modified density of states function which allows a classical solution of Poisson's equation, a computationally efficient method for obtaining the bound-state electron concentration in the two-dimensional electron gas in MODFETs has been developed. The method gives results which agree very closely with those from the full, self-consistent, quantum-mechanical calculation}, keywords = {carrier density;high electron mobility transistors;semiconductor device models;two-dimensional electron gas;WKB calculations;}, URL = {http://dx.doi.org/10.1016/0038-1101(92)90260-J}, author = { Zhou, Haosheng and Pulfrey, D.L.} }