@inproceedings { 6511941, title = {Compact modeling of high-frequency, small-dimension bipolar transistors}, journal = {1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)}, year = {1999}, note = {compact model;high-frequency bipolar transistor;high-speed device;quasi-ballistic transport;drift-diffusion equation;Boltzmann transport equation;maximum oscillation frequency;small-dimension BJT;}, pages = {81 - 5}, type = {inproceedings}, address = {Perth, WA, Australia}, abstract = {Recent progress in the development of compact models for high-speed bipolar transistors with quasi-ballistic base widths (on the order of a mean-free path length) is summarized. The correctness of basing such models on the drift-diffusion equation is examined by comparing results with solutions to the Boltzmann transport equation. Useful and well-founded compact expressions are presented for important dc and ac device parameters}, keywords = {bipolar transistors;Boltzmann equation;semiconductor device models;}, URL = {http://dx.doi.org/10.1109/COMMAD.1998.791590}, author = { Pulfrey, D.L. and St. Denis, A.R. and Vaidyanathan, M.} }