@article { 4447692, title = {Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's}, journal = {IEEE Trans. Electron Devices (USA)}, volume = {40}, number = {6}, year = {1993}, note = {AlGaAs-GaAs HBT;base-emitter junction;electron quasi-Fermi level splitting;double-heterojunction bipolar transistors;current gain;AlGaAs-GaAs single heterojunction bipolar transistor;}, pages = {1183 - 5}, type = {article}, abstract = {The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices. However, it is argued that the effect of the splitting on the current gain may be significant}, keywords = {aluminium compounds;Fermi level;gallium arsenide;heterojunction bipolar transistors;III-V semiconductors;semiconductor device models;}, URL = {http://dx.doi.org/10.1109/16.214752}, author = { Pulfrey, D.L. and Searles, S.} }