@article { 5277586, title = {The influence of a transverse-effective-mass difference on the current at an abrupt heterojunction}, journal = {J. Appl. Phys. (USA)}, volume = {79}, number = {8}, year = {1996}, note = {transverse-effective-mass difference;abrupt heterojunction;momentum conservation;tunneling;forward bias;AlGaAs/GaAs;HBTs;AlGaAs-GaAs;}, pages = {4203 - 10}, type = {article}, abstract = {The issue of momentum conservation, and its effect on tunneling, at an abrupt heterojunction interface between semiconductors of different transverse effective mass is considered. A thorough derivation is provided of the equations needed to calculate the electron tunnel current in forward bias. Quantitative results are presented for the current in a variety of effective-mass-difference scenarios, including that of the AlGaAs/GaAs case. The circumstances are identified in which the effective-mass difference causes the current to differ significantly from the value computed when following the usual practice of assuming the effective masses are equal}, keywords = {aluminium compounds;effective mass;gallium arsenide;heterojunction bipolar transistors;III-V semiconductors;semiconductor device models;semiconductor heterojunctions;tunnelling;}, URL = {http://dx.doi.org/10.1063/1.361787}, author = { Searles, S. and Pulfrey, D.L.} }