@article { 4086063, title = {Computation of transit and signal delay times for the collector depletion region of GaAs-based HBTs}, journal = {Solid-State Electron. (UK)}, volume = {35}, number = {1}, year = {1992}, note = {transit time;signal delay times;collector depletion region;HBTs;inverted-field structure;intervalley transfer;AlGaAs-GaAs;}, pages = {113 - 15}, type = {article}, abstract = {This paper describes an investigation for GaAs-based HBTs in which the magnitude of the field in the collector portion of the base-collector depletion region is taken to be either uniform, decreasing (conventional structure) or increasing (inverted-field structure). The ν(x) profile is computed from the E(x) profile, taking into account intervalley transfer}, keywords = {aluminium compounds;delays;gallium arsenide;heterojunction bipolar transistors;III-V semiconductors;}, URL = {http://dx.doi.org/10.1016/0038-1101(92)90312-Z}, author = { Zhou, Haosheng and Pulfrey, D.L.} }