@article { 6862329, title = {High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes}, journal = {IEEE Trans. Electron Devices (USA)}, volume = {48}, number = {3}, year = {2001}, note = {high UV/solar rejection ratios;p-i-n photodiodes;solar-blind detection capability;heterostructure diodes;doped GaN layers;MEDICI;simulations;InGaN quantum wells;delta-doped regions;low-bandgap GaN regions;PIN photodiodes;GaN-Al0.33Ga0.67N-GaN;InGaN;}, pages = {486 - 9}, type = {article}, abstract = {The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features, such as InGaN quantum wells and delta-doped regions of p-Al0.33Ge0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude}, keywords = {aluminium compounds;doping profiles;gallium compounds;III-V semiconductors;p-i-n photodiodes;semiconductor device models;}, URL = {http://dx.doi.org/10.1109/16.906440}, author = { Pulfrey, D.L. and Kuek, J.J. and Leslie, M.P. and Nener, B.D. and Parish, G. and Mishra, U.K. and Kozodoy, P. and Tarsa, E.J.} }