@inproceedings { 7011141, title = {Highly selective GaN/AlGaN/GaN UV photodiodes}, journal = {WOCSDICE 2000. 24th Workshop on Compound Semiconductor Devices and Integrated Circuits}, year = {2000}, note = {selective GaN/AlGaN/GaN UV photodiodes;Al0.33Ga0.67N bandgap;UV photodetection;photodiode fabrication;doped layer quality;doping;p-i-n diode fabrication;undoped AlGaN layer;doped GaN layers;photocurrent generation;low-bandgap window layer;GaN-Al0.33Ga0.67N-GaN;}, pages = {XV-9, XV-10 -}, type = {inproceedings}, address = {Aegean Sea, Greece}, abstract = {Al0.33Ga0.67N has a highly desirable bandgap for UV photodetection purposes, but fabricating photodiodes from this material is currently hindered by difficulties in growing high-quality doped layers. A recent solution to the doping problem has involved the fabrication of p-i-n diodes in which an undoped AlGaN layer is sandwiched between layers of doped GaN. An analysis of this structure is presented, with emphasis on how the unwanted photocurrent generated in the low-bandgap window layer can be suppressed}, keywords = {aluminium compounds;doping profiles;gallium compounds;III-V semiconductors;p-i-n photodiodes;photoconductivity;ultraviolet detectors;wide band gap semiconductors;}, author = { Pulfrey, D.L. and Leslie, M.P. and Kueck, J.J. and Nener, B.D. and Parish, G. and Mishra, U.K. and Kozodoy, P. and Tarsa, E.J.} }