@inproceedings { 7692761, title = {Full-chip power-supply noise: the effect of on-chip power-rail inductance}, journal = {Int. J. High Speed Electron. Syst. (Singapore)}, volume = {12}, number = {2}, year = {2002}, note = {full-chip power-supply noise;on-chip power-rail inductance;delta-I power-supply noise;circuit simulation;integrated circuit power net;IC power net;high-inductance-bonding packages;low-inductance-bonding packages;CMOS technology;simultaneous switching events;triggering current transients;core-logic switching;de-coupling role;nonswitching gate capacitance;0.18 micron;}, pages = {573 - 82}, type = {inproceedings}, address = {St. Croix, VI, USA}, abstract = {The importance of on-chip power-rail inductance in generating delta-I power-supply noise is examined in this paper using systematic circuit simulation of the complete integrated-circuit power net. This source of noise is compared to the resistive IR drop in the net, and to the delta-I noise due to both high-inductance- and low- inductance-bonding packages. Results are presented for a typical on-chip power net in 0.18 μm CMOS technology, and it is demonstrated that the inductance of this on-chip power net is the dominant contributor to the full-chip power-supply noise. The simultaneous switching events which produce the triggering current transients for the delta-I noise are taken to arise from core-logic switching; the mitigating, de-coupling role of the capacitance of non-switching gates within the core-logic block is considered}, keywords = {circuit simulation;CMOS digital integrated circuits;equivalent circuits;inductance;integrated circuit noise;switching;transients;}, URL = {http://dx.doi.org/10.1142/S0129156402001472}, author = { Fok, C.W. and Pulfrey, D.L.} }