@article { 8813424, title = {Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes}, journal = {Solid-State Electron. (UK)}, volume = {49}, number = {12}, year = {2005}, note = {surface-layer damage;sputtered-ITO Schottky-barrier photodiodes;p-GaN Schottky-barrier photodiodes;donor-like nitrogen vacancy;Schottky-barrier metal;p-type gallium nitride;minority-carrier lifetime;damaged surface layer;responsivity value;electron diffusion length;minority carrier diffusion length;InSnO-GaN;}, pages = {1969 - 73}, type = {article}, abstract = {It is postulated that donor-like nitrogen vacancies, caused by the sputtering of a Schottky-barrier metal onto p-type gallium nitride, diffuse into the GaN and form a surface layer in which both the minority-carrier lifetime and mobility are drastically reduced. Such a damaged surface layer is shown to reduce the responsivity of p-GaN Schottky-barrier photodiodes, thereby offering an explanation for the responsivity values in the range of 0.03-0.04A/W that have been measured in experimental ITO/p-GaN devices. On making allowance for the damaged surface layer, an electron diffusion length of around 300nm can be inferred for the undamaged p-GaN region. [All rights reserved Elsevier]}, keywords = {carrier lifetime;carrier mobility;gallium compounds;III-V semiconductors;indium compounds;minority carriers;photodiodes;Schottky diodes;sputtering;}, URL = {http://dx.doi.org/10.1016/j.sse.2005.09.013}, author = { Pulfrey, D.L. and Parish, G. and Wee, D. and Nener, B.D.} }