@inproceedings { 8916805, title = {Switching-speed calculations for Schottky-barrier carbon nanotube field-effect transistors}, journal = {J. Vac. Sci. Technol. A, Vac. Surf. Films (USA)}, volume = {24}, number = {3}, year = {2006}, note = {switching-speed calculations;Schottky-barrier carbon nanotube;field-effect transistors;on/off-current ratios;tube diameters;insulator thickness;low leakage current device;high speed device;interelectrode capacitances;intrinsic switching time;digital-logic application;carbon nanotube field-effect transistor;complementary metal-oxide semiconductor transistors;C;}, pages = {708 - 12}, type = {inproceedings}, address = {Canada}, abstract = {The switching times and on/off-current ratios are computed for Schottky-barrier carbon nanotube field-effect transistors with different tube diameters and insulator thicknesses. It is indicated that it may be difficult to obtain a device exhibiting both high speed and low leakage current. A small-diameter nanotube with a thin insulator may offer the best compromise. It is also demonstrated that interelectrode capacitances can be large, thereby calling into question the usefulness of the intrinsic switching time as a figure of merit for transistors intended for digital-logic applications. The extrinsic switching time is a more appropriate metric and it is shown here that considerable optimization of the carbon nanotube field-effect transistor will be required to achieve figures better than for modern Si complementary metal-oxide-semiconductor transistors over a reasonable range of on/off-current ratio}, keywords = {capacitance;carbon nanotubes;field effect transistor switches;leakage currents;Schottky barriers;}, URL = {http://dx.doi.org/10.1116/1.2194932}, author = { John, D.L. and Pulfrey, D.L.} }