@inproceedings { 7955878, title = {Carbon nanotube transistors: an evaluation}, journal = {Proc. SPIE - Int. Soc. Opt. Eng. (USA)}, volume = {5276}, number = {1}, year = {2004}, note = {carbon nanotube transistors;carbon nanotube FET DC performance;FET nonequilibrium model;work function engineering;source contacts;drain contacts;gate contacts;thermionic limit sub-threshold slope;interfacial limit conductance;ON/OFF ratio;ON current;transconductance;low-quantum-capacitance limit;C;}, pages = {1 - 10}, type = {inproceedings}, address = {Perth, SA, Australia}, abstract = {A simple, non-equilibrium model is used to evaluate the likely DC performance of carbon nanotube field-effect transistors. It is shown that, by appropriate work function engineering of the source, drain and gate contacts to the device, the following desirable properties should be realizable: a sub-threshold slope close to the thermionic limit; a conductance close to the interfacial limit; an ON/OFF ratio of around 103; ON current and transconductance close to the low-quantum-capacitance limit}, keywords = {carbon nanotubes;field effect transistors;nanoelectronics;semiconductor device models;work function;}, URL = {http://dx.doi.org/10.1117/12.533349}, author = { Castro, L.C. and John, D.L. and Pulfrey, D.L.} }