@inproceedings { ho_ultra-low_200, title = {Ultra-low power 90nm 6T SRAM cell for wireless sensor network applications}, journal = {2006 IEEE International Symposium on Circuits and Systems (IEEE Cat. No. 06CH37717C)}, year = {2006}, pages = {4 pp.}, publisher = {IEEE}, organization = {IEEE}, type = {inproceedings}, address = {Island of Kos, Greece}, abstract = {This paper presents a comparative study of leakage reduction techniques applied to a 90 nm 6T SRAM to find an optimal design for ultra-low power wireless sensor applications. A 4-Kb SRAM implemented with the proposed techniques has a leakage as low as 26.5 nA in the idle mode, a 189? improvement over a memory without applying such techniques}, keywords = {integrated circuit design,low-power electronics,SRAM chips,wireless sensor networks}, author = { Ho, D. and Iniewski, K. and Kasnavi, S. and Ivanov, A. and Natarajan, S.} }