@inproceedings { Li05a, title = {RR-P3HT OTFTs using low-temperature PECVD silicon nitride as gate dielectric and encapsulation}, journal = {207th Electrochemical Society (ECS) Meeting}, volume = {501}, year = {2005}, month = {16/05/2005}, pages = {7}, address = {Quebec City, Quebec}, author = {F. Li and S. Koul and Y. Vygranenko and P. Servati and A. Nathan} }